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| Excelics DATA SHEET * * * * * * +34.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 8GHz 0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 80mA PER BIN RANGE O 50 D D EFA480B Low Distortion GaAs Power FET 960 156 D D 48 420 110 40 S 95 G S 120 G 45 S G S G S ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Saturated Drain Current Transconductance Pinch-off Voltage f = 8GHz f =12GHz f = 8GHz f =12GHz f =8GHz Chip Thickness: 50 10 microns (with > 20 microns Gold Plated Heat Sink (PHS) ) All Dimensions In Microns MIN 32.0 4.0 TYP 34.0 34.0 10.0 6.0 35 MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=10mA 800 560 1360 720 -2.0 1760 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=4.8mA Source Breakdown Voltage Igs=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) -12 -7 -15 -14 10 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 1.4A Ids Forward Gate Current 120mA 20mA Igsf Input Power 32dBm @3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 14 W 11 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA480B DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: 8V, 1/2 Idss --- S11 ----- S21 --MAG ANG MAG ANG 0.944 -115.5 11.585 117.1 0.929 -145.4 6.478 98.5 0.926 -157.1 4.413 88.9 0.925 -163.3 3.326 81.9 0.925 -167.2 2.659 76.0 0.925 -169.9 2.208 70.8 0.925 -171.9 1.883 65.9 0.926 -173.6 1.636 61.3 0.927 -174.9 1.443 57.0 0.928 -176.1 1.287 52.7 0.928 -177.1 1.158 48.6 0.929 -178.0 1.050 44.7 0.930 -178.9 0.958 40.8 0.931 -179.7 0.878 37.1 0.932 179.6 0.809 33.5 0.933 178.9 0.747 30.0 0.934 178.3 0.693 26.6 0.935 177.6 0.644 23.4 0.936 177.0 0.600 20.2 0.937 176.4 0.561 17.1 --- S12 --MAG ANG 0.019 33.5 0.021 21.3 0.021 18.2 0.021 17.7 0.021 18.5 0.021 20.0 0.021 22.0 0.021 24.4 0.022 27.0 0.022 29.8 0.022 32.8 0.022 35.9 0.023 39.0 0.023 42.0 0.024 45.0 0.025 47.8 0.026 50.4 0.027 52.9 0.028 55.1 0.030 57.1 --- S22 --MAG ANG 0.384 -159.9 0.425 -165.4 0.440 -166.5 0.453 -166.2 0.465 -165.6 0.479 -164.8 0.494 -164.1 0.510 -163.6 0.526 -163.2 0.543 -162.9 0.561 -162.9 0.579 -162.9 0.596 -163.1 0.613 -163.5 0.630 -163.9 0.647 -164.5 0.663 -165.1 0.679 -165.7 0.694 -166.5 0.708 -167.3 The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each. |
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